S2B [BL Galaxy Electrical]
SURFACE MOUNT RECTIFIERS; 表面贴装整流器
| 型号： | S2B |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SURFACE MOUNT RECTIFIERS |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
S2A---S2M
BL
111REVERSE VOLTAGE: 50 --- 1000 V
CURRENT: 2.0 A
SURFACE MOUNT RECTIFIERS
FEATURES
DO - 214AA(SMB)
Plastic package has Underwriters Laboratory
111 FlammabilityClassification 94V-0
◇
For surface mounted applications
Low profile package
◇
◇
Built-in strain relief,ideal for automated placement
◇
High current capability
◇
◇
High temperature soldering:
111 250oC/10 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
◇
1111passivated chip
Terminals:Solder Plated, solderable per MIL-STD-
◇
1111750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
◇
◇
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNITS
SB
SA
SD
SG
SJ
SK
SM
Device marking code
VRRM
VRWS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
100
1000
MaximumDC Blocking Voltage
Maximumaverage forw ord rectified current at
V TL=100OC
2.0
I(AV)
IFSM
VF
A
A
V
Peak forw ard surge current @ TL = 110°C 8.3ms
V single half-sine-wave superimposed on rated
V load(JEDEC Method)
50.0
1.15
1.0
MaximumInstantaneous Forw ard Voltage at 2.0A
MaximumDCreverse current
@TA=25oC
IR
μA
at rated DC blocking voltage @T =125oC
125.0
2.0
A
trr
Maximumreverse recovery time (NOTE1)
Typical junction capacitance (NOTE2)
μS
CJ
30.0
53.0
16.0
pF
Rθ
JA
oC/W
oC
Typical thermal resitance (NOTE3)
Rθ
JL
TJTSTG
-55--------+150
Operating junction and storage temperature range
NOTE: 1.Reverse recovery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
www.galaxycn.com
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number 0280002
1.
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
S2A - - - S2M
FIG.1 -- FORWARD DERATING CURVE
FIG.2 PEAK FORWARD SURGE CURRENT
100
10
1
Resistive or inductive
Load
O
TL=110 C
8.3ms Single Half Sine Wave
(JEDEC Method)
2.0
S2(A-J)
1.0
S2(K,M)
60Hz Resistive or
Inductive load
P.C.B.MOUNTED
0.27''X0.27''(7.0X7.0mm)
THICK COPPERPAND AREAS
0
50 60 70 80 90 100 110 120 130 140 150
1
10
100
AMBIENT TEMPERATURE
℃
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
100
10
TJ=125OC
1
TJ=25OC
1
TJ=75OC
0.1
0.1
Pulse Width=300
1%DUTY CYCLE
S
TJ=25OC
0.01
0.01
0.4 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
％
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
10
1
TJ=250C
f=1.0MHZ
Vsig=50mVp-p
1
0.1
0.01
10
100
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
2.
BLGALAXY ELECTRICAL
Document Number 0280002
相关型号：
S2B-13-F
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, GREEN, PLASTIC, SMB, 2 PIN
DIODES
S2B-E3/52T
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
S2B-E3/5BT
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
S2B-GT3
Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, PALSTIC, SMB, 2 PIN
SENSITRON
S2B-HE3
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
S2B-HE3/52T
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
S2B-HE3/5BT
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明